indium gallium arsenide phosphide

materials science

Also known as: InGaAsP

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June 29, 2026

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Indium gallium arsenide phosphide (InGaAsP) is a semiconductor material used in optoelectronics. It is a III-V compound, meaning it is formed by combining elements from Group III and Group V of the periodic table.12

This material is particularly valuable because it can be tailored to generate or detect photons of specific wavelengths. For instance, an InGaAsP laser can produce radiation at 1.55 micrometers, which is used for transmitting digitally coded information streams. This capability allows InGaAsP components to perform both electronic and photonic functions within a single integrated circuit. Compared to silicon, III-V semiconductors like InGaAsP offer higher electron mobility, leading to faster operating speeds and lower voltage operation for specific functions.1

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gallium
Oxidation states and compounds
…(GaN), gallium arsenide (GaAs), and indium gallium arsenide phosphide (InGaAsP)—that have valuable semiconductor and optoelectronic properties.
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…(GaN), gallium arsenide (GaAs), and indium gallium arsenide phosphide (InGaAsP)—that have valuable semiconductor and optoelectronic properties.
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materials science
III–V compounds
For example, an indium gallium arsenide phosphide (InGaAsP) laser can generate radiation at 1.55 micrometres to carry digitally coded information streams. (See below Photonic materials.) This means that a III–V component can fill both electronic and photonic functions in the same integrated circuit.
Read More
For example, an indium gallium arsenide phosphide (InGaAsP) laser can generate radiation at 1.55 micrometres to carry digitally coded information streams. (See below Photonic materials.) This means that a III–V component can fill both electronic and photonic functions in the same integrated circuit.
Read More