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ferroelectric random-access memory
References
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ferroelectric random-access memory

electronics
Also known as: FERAM
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Learn about this topic in these articles:

  • Figure 1: Ferroelectric properties of barium titanate (BaTiO3). (Left) Above 120° C the structure of the BaTiO3 crystal is cubic, and there is no net polarization of charge; (right) below 120° C the structure changes to tetragonal, shifting the relative positions of the ions and causing a concentration of positive and negative charges toward opposite ends of the crystal.
    capacitor dielectric and piezoelectric ceramics
    / Random-access memories

    …as ferroelectric random-access memories (FERAMs), where the opposing directions of polarization can represent the two states of binary logic. Unlike conventional semiconductor RAM, the information stored in FERAMs is nonvolatile; i.e., it is retained when the power is turned off.

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    …as ferroelectric random-access memories (FERAMs), where the opposing directions of polarization can represent the two states of binary logic. Unlike conventional semiconductor RAM, the information stored in FERAMs is nonvolatile; i.e., it is retained when the power is turned off.

    Read More