chemical vapour deposition

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chemical vapour deposition

chemical process

Also known as: CVD, VPE, vapour-phase epitaxy

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June 24, 2026

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Chemical vapor deposition (CVD) is a technique used to deposit thin solid layers of a substance onto a surface. This process involves high-temperature gas-phase chemical reactions occurring near the surface where the deposition takes place.1

CVD is a type of vapor phase epitaxy, a process where a crystal grows on another crystal, with its orientation determined by the underlying crystal. This is crucial for creating layers in semiconductor wafers used in integrated circuits and optoelectronic devices. In CVD, the atoms for this epitaxial growth are supplied from a precursor gas.2

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advanced ceramics
Film deposition
…physical vapour deposition (PVD) and chemical vapour deposition (CVD). PVD methods include laser ablation, in which a high-energy laser blasts material from a target and through a vapour to a substrate, where the material is deposited. Another PVD approach involves sputtering, in which energetic electrons bombard the surface of a…
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…physical vapour deposition (PVD) and chemical vapour deposition (CVD). PVD methods include laser ablation, in which a high-energy laser blasts material from a target and through a vapour to a substrate, where the material is deposited. Another PVD approach involves sputtering, in which energetic electrons bombard the surface of a…
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crystal
Growth from the melt
Chemical vapour deposition (CVD) is another form of epitaxy that makes use of the vapour growth technique. Also known as vapour-phase epitaxy (VPE), it is much faster than MBE since the atoms are delivered in a flowing gas rather than in a molecular beam. Synthetic…
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Chemical vapour deposition (CVD) is another form of epitaxy that makes use of the vapour growth technique. Also known as vapour-phase epitaxy (VPE), it is much faster than MBE since the atoms are delivered in a flowing gas rather than in a molecular beam. Synthetic…
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epitaxy
…a number of approaches to vapour phase epitaxy, which is the most common process for epitaxial layer growth. Molecular beam epitaxy provides a pure stream of atomic vapour by thermally heating the constituent source materials. For example, silicon can be placed in a crucible or cell for silicon epitaxy, or…
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…a number of approaches to vapour phase epitaxy, which is the most common process for epitaxial layer growth. Molecular beam epitaxy provides a pure stream of atomic vapour by thermally heating the constituent source materials. For example, silicon can be placed in a crucible or cell for silicon epitaxy, or…
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industrial glass
From the gaseous state
Chemical vapour deposition, or CVD, belongs to this latter category, with a good example being the making of silica glass by hydroxylation. In the hydroxylation technique, vapours of silicon tetrachloride (SiCl₄) are reacted at high temperatures with steam (H₂O), causing a “soot” of silica (SiO₂)…
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Chemical vapour deposition, or CVD, belongs to this latter category, with a good example being the making of silica glass by hydroxylation. In the hydroxylation technique, vapours of silicon tetrachloride (SiCl₄) are reacted at high temperatures with steam (H₂O), causing a “soot” of silica (SiO₂)…
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integrated circuit
Chemical methods
…one common method, known as chemical vapour deposition, the substrate is placed in a low-pressure chamber where certain gases are mixed and heated to 650–850 °C (1,200–1,550 °F) in order to form the desired solid film substance. The solid condenses from the mixed gases and “rains” evenly over the surface…
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…one common method, known as chemical vapour deposition, the substrate is placed in a low-pressure chamber where certain gases are mixed and heated to 650–850 °C (1,200–1,550 °F) in order to form the desired solid film substance. The solid condenses from the mixed gases and “rains” evenly over the surface…
Read More