homoepitaxy

Homoepitaxy is a process where a crystal layer is grown on a substrate made of the same material. This technique is crucial in the semiconductor industry for creating layers in wafers used in integrated circuits and optoelectronic devices.1

The term "epitaxy" comes from Greek words meaning "upon" and "arrangement," highlighting how the orientation of the new crystal is dictated by the underlying one. In homoepitaxy, the deposited atoms align with the crystal structure of the substrate, forming a continuous crystalline film. This is distinct from heteroepitaxy, where the growth layer is a different material than the substrate.1

Common methods for epitaxial growth include vapor phase epitaxy, liquid phase epitaxy, and solid phase epitaxy, each involving different states of matter for deposition. The precise matching of crystal lattice structures between the substrate and the growth layer is important for successful epitaxy, minimizing defects and ensuring high-quality crystalline films.12