Why is silicon used more widely than germanium in semiconductor devices?

In the field of materials science, silicon has largely supplanted germanium as the primary material for semiconductor devices due to several critical technical and economic advantages.12

The widespread adoption of silicon is driven by three main factors:

• Thermal Stability: Silicon devices can operate at significantly higher temperatures than those made of germanium. While germanium diodes are generally limited to temperatures below 85 °C (185 °F), silicon diodes can function at temperatures up to 200 °C (400 °F).2
• Lower Leakage Currents: Silicon devices exhibit much lower leakage currents than germanium devices, particularly at moderately elevated temperatures, which improves overall device performance and reliability.1
• Native Oxide Formation: A crucial advantage of silicon is its ability to form a high-quality, tenaciously adhering layer of silicon dioxide when heated in the presence of oxygen. This oxide serves as an excellent electrical insulator and acts as a mask during the photolithographic manufacturing process, enabling the creation of complex, low-cost integrated circuits.12

Additionally, silicon is far more abundant in nature than germanium, making it a more cost-effective raw material for large-scale manufacturing.2