Why can impurities at grain boundaries interfere with current flow in ceramic conductors?

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In the field of materials science, the performance of conductive ceramics is heavily dependent on the precise control of their microstructure, particularly at the grain boundaries where adjacent grains meet.1

While some specialized devices, such as varistors and certain capacitors, intentionally utilize grain boundary barriers to function, the segregation of impurities at these boundaries generally has adverse effects on the performance of ceramic conductors and superconductors. These impurities can interfere with current flow by acting as physical or electronic obstacles that impede the movement of charge carriers—whether they are electrons or ions—across the interface between grains.12

Because the quality of these advanced materials is determined by their grain size and boundary chemistry, manufacturers must employ high-purity starting materials and strictly control processing, consolidation, and firing to minimize these detrimental effects.1