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Who invented the transistor at Bell Laboratories?

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NMOS transistorNegative-channel metal-oxide semiconductors (NMOS) employ a positive secondary voltage to switch a shallow layer of p-type semiconductor material below the gate into n-type. For positive-channel metal-oxide semiconductors (PMOS), all these polarities are reversed. NMOS transistors are more expensive, but faster, than PMOS transistors. — transistor NMOS transistor
Negative-channel metal-oxide semiconductors (NMOS) employ a positive secondary voltage to switch a shallow layer of p-type semiconductor material below the gate into n-type. For positive-channel metal-oxide semiconductors (PMOS), all these polarities are reversed. NMOS transistors are more expensive, but faster, than PMOS transistors.

The transistor was invented at Bell Laboratories by three physicists: John Bardeen, Walter H. Brattain, and William B. Shockley.123

The team's collaborative efforts led to two distinct breakthroughs:
* Point-contact transistor: Invented by Bardeen and Brattain on December 16, 1947, this was the first successful semiconductor amplifier.1
* Junction transistor: Conceived by Shockley in January 1948, this design utilized a three-layer "sandwich" structure that proved more reliable for manufacturing.1

In June 1948, Bell Labs officially announced the invention, crediting all three men as the co-inventors. Their pioneering work, which replaced bulky vacuum tubes and enabled the miniaturization of electronic components, earned them the Nobel Prize for Physics. The term "transistor" was later coined by Bell Labs engineer John Robinson Pierce.123