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How does silicon’s higher temperature tolerance compare with germanium’s?

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NMOS transistorNegative-channel metal-oxide semiconductors (NMOS) employ a positive secondary voltage to switch a shallow layer of p-type semiconductor material below the gate into n-type. For positive-channel metal-oxide semiconductors (PMOS), all these polarities are reversed. NMOS transistors are more expensive, but faster, than PMOS transistors. — transistor NMOS transistor
Negative-channel metal-oxide semiconductors (NMOS) employ a positive secondary voltage to switch a shallow layer of p-type semiconductor material below the gate into n-type. For positive-channel metal-oxide semiconductors (PMOS), all these polarities are reversed. NMOS transistors are more expensive, but faster, than PMOS transistors.

Silicon possesses a significantly higher temperature tolerance than germanium, which is a primary reason it became the preferred material for transistor and integrated circuit manufacturing.12

In electronic applications, the thermal limitations of these materials are distinct:

Silicon: Devices made from silicon can typically operate at temperatures up to 200 °C (400 °F).1
Germanium: Devices made from germanium are much more limited, as they cannot be operated above 85 °C (185 °F).1

The disparity in performance arises because germanium-based devices exhibit high leakage currents at only moderately elevated temperatures, making them unsuitable for many applications. By contrast, silicon retains its semiconducting properties at higher temperatures and offers the additional advantage of forming a high-quality insulating oxide layer, which is crucial for modern device fabrication.21