How does silicon’s ability to work at high temperatures compare with germanium’s?

Silicon is significantly more capable than germanium when operating at high temperatures, which is a primary reason it has largely supplanted germanium in semiconductor device fabrication.1

Devices made from germanium are limited by high leakage currents at only moderately elevated temperatures, making them unsuitable for many applications. Specifically, germanium diodes cannot be operated above 85 °C (185 °F). In contrast, silicon retains its semiconducting properties at much higher temperatures, allowing silicon diodes to function at temperatures up to 200 °C (400 °F).12

Furthermore, silicon's ability to form a high-quality, insulating silicon dioxide film when heated in the presence of oxygen provides a critical manufacturing advantage that germanium lacks, further cementing silicon's dominance in modern electronics.12