Why can junction breakdown be nondestructive when power dissipation is limited?

Junction breakdown in a p-n junction occurs when a reverse bias reaches a critical voltage, causing a sudden, sharp increase in current flow.12

This phenomenon is typically nondestructive because the breakdown process itself does not inherently damage the single crystal structure of the semiconductor, provided that the resulting power dissipation is kept within safe limits. If the current is not restricted, the intense flow of charge carriers can generate excessive heat, which may melt or permanently alter the material. By limiting the power dissipation, the device avoids the thermal damage that would otherwise occur during the high-current state, allowing it to function reliably—a principle utilized in components like the Zener diode for precise voltage control.123