How does dynamic secondary ion mass spectrometry create a depth profile?

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In secondary ion mass spectrometry (SIMS), depth profiling is achieved by utilizing the "dynamic" mode of operation.

In this mode, a primary ion beam with a high current density—typically around 10−6 amperes per square cm—is directed at the sample surface. This intense bombardment causes rapid erosion of the material through a process known as sputtering, where the primary ions penetrate the lattice and expel atoms, molecules, or molecular fragments from the surface. As the beam continuously "bores" into the solid over time, it effectively eats away the surface layers, allowing the mass spectrometer to analyze the composition of the material at increasing depths.12